IndiumV3, Russie, Analysis, bibRecord, 000165

Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Identifieur interne : 000165 ( Russie/Analysis ); précédent : 000164; suivant : 000166

Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Auteurs : RBID : Pascal:09-0211340

Descripteurs français

Pascal (Inist)
- Dopage, Rayonnement IR lointain, Gravure faisceau ionique, Densité électron, Epitaxie jet moléculaire, In situ, Indium, Caractéristique électrique, Tellurure de cadmium, Composé ternaire, Tellurure de mercure, Semiconducteur type n, Matériau dopé, Fabrication microélectronique, 8115H, HgCdTe.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Cadmium tellurides, Doped materials, Doping, Electrical characteristic, Electron density, Far infrared radiation, In situ, Indium, Ion beam etching, Mercury tellurides, Microelectronic fabrication, Molecular beam epitaxy, Ternary compound, n type semiconductor.

Abstract

Ion milling was used to establish the minimum donor doping level N_md required for obtaining n-regions with reproducible electron concentration in HgCdTe-based LWIR and MWIR device structures fabricated with ion treatment. The experiments were performed on n-type films grown by molecular beam epitaxy, un-doped and in situ doped with indium with the concentration N_In = 5 × 10¹⁴-10¹⁷ cm^-3. A study of the electrical properties of the milled films showed that N_md comprised ∼2 x 10¹⁵ cm^-3 for the LWIR and ∼5 × 10¹⁵ cm^-3 for the MWIR films. In the films with N_In exceeding these critical values, the electron concentration after the milling strictly followed the doping. A need for consideration of the disintegration of the milling-induced defects is also shown.

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to stream Main, to step Repository: 005686
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Pascal:09-0211340

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling</title>
<author><name sortKey="Pociask, M" uniqKey="Pociask M">M. Pociask</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Rzeszów University, 16A Rejtana Str</s1>
<s2>Rzeszów 35-310</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>Rzeszów 35-310</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Izhnin, I I" uniqKey="Izhnin I">I. I. Izhnin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>R&D Institute for Materials SRC 'Carat', 202 Stryjska Str</s1>
<s2>Lviv 79031</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>Lviv 79031</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Izhnin, A I" uniqKey="Izhnin A">A. I. Izhnin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>R&D Institute for Materials SRC 'Carat', 202 Stryjska Str</s1>
<s2>Lviv 79031</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>Lviv 79031</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Dvoretsky, S A" uniqKey="Dvoretsky S">S. A. Dvoretsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
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</author>
<author><name sortKey="Mikhailov, N N" uniqKey="Mikhailov N">N. N. Mikhailov</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sidorov, Yu G" uniqKey="Sidorov Y">Yu. G. Sidorov</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Varavin, V S" uniqKey="Varavin V">V. S. Varavin</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Novosibirsk 630090</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mynbaev, K D" uniqKey="Mynbaev K">K. D. Mynbaev</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Ioffe Physical-Technical Institute of the Russian Academy of Sciences</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Ioffe Physical-Technical Institute of the Russian Academy of Sciences</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">09-0211340</idno>
<date when="2009">2009</date>
<idno type="stanalyst">PASCAL 09-0211340 INIST</idno>
<idno type="RBID">Pascal:09-0211340</idno>
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</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium tellurides</term>
<term>Doped materials</term>
<term>Doping</term>
<term>Electrical characteristic</term>
<term>Electron density</term>
<term>Far infrared radiation</term>
<term>In situ</term>
<term>Indium</term>
<term>Ion beam etching</term>
<term>Mercury tellurides</term>
<term>Microelectronic fabrication</term>
<term>Molecular beam epitaxy</term>
<term>Ternary compound</term>
<term>n type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dopage</term>
<term>Rayonnement IR lointain</term>
<term>Gravure faisceau ionique</term>
<term>Densité électron</term>
<term>Epitaxie jet moléculaire</term>
<term>In situ</term>
<term>Indium</term>
<term>Caractéristique électrique</term>
<term>Tellurure de cadmium</term>
<term>Composé ternaire</term>
<term>Tellurure de mercure</term>
<term>Semiconducteur type n</term>
<term>Matériau dopé</term>
<term>Fabrication microélectronique</term>
<term>8115H</term>
<term>HgCdTe</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Ion milling was used to establish the minimum donor doping level N<sub>md</sub>
 required for obtaining n-regions with reproducible electron concentration in HgCdTe-based LWIR and MWIR device structures fabricated with ion treatment. The experiments were performed on n-type films grown by molecular beam epitaxy, un-doped and in situ doped with indium with the concentration N<sub>In</sub>
 = 5 × 10<sup>14</sup>
-10<sup>17</sup>
 cm<sup>-3</sup>
. A study of the electrical properties of the milled films showed that N<sub>md</sub>
 comprised ∼2 x 10<sup>15</sup>
 cm<sup>-3</sup>
 for the LWIR and ∼5 × 10<sup>15</sup>
 cm<sup>-3</sup>
 for the MWIR films. In the films with N<sub>In</sub>
 exceeding these critical values, the electron concentration after the milling strictly followed the doping. A need for consideration of the disintegration of the milling-induced defects is also shown.</div>
</front>
</TEI>
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<fA08 i1="01" i2="1" l="ENG"><s1>Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>POCIASK (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>IZHNIN (I. I.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>IZHNIN (A. I.)</s1>
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<fA11 i1="04" i2="1"><s1>DVORETSKY (S. A.)</s1>
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<fA11 i1="05" i2="1"><s1>MIKHAILOV (N. N.)</s1>
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<fA11 i1="06" i2="1"><s1>SIDOROV (Yu. G.)</s1>
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<fA11 i1="07" i2="1"><s1>VARAVIN (V. S.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>MYNBAEV (K. D.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Physics, Rzeszów University, 16A Rejtana Str</s1>
<s2>Rzeszów 35-310</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>R&D Institute for Materials SRC 'Carat', 202 Stryjska Str</s1>
<s2>Lviv 79031</s2>
<s3>UKR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences</s1>
<s2>Novosibirsk 630090</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Ioffe Physical-Technical Institute of the Russian Academy of Sciences</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>8 aut.</sZ>
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<fA20><s2>025031.1</s2>
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<fA44><s0>0000</s0>
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<fA45><s0>17 ref.</s0>
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<fA60><s1>P</s1>
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<fA66 i1="01"><s0>GBR</s0>
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<fC01 i1="01" l="ENG"><s0>Ion milling was used to establish the minimum donor doping level N<sub>md</sub>
 required for obtaining n-regions with reproducible electron concentration in HgCdTe-based LWIR and MWIR device structures fabricated with ion treatment. The experiments were performed on n-type films grown by molecular beam epitaxy, un-doped and in situ doped with indium with the concentration N<sub>In</sub>
 = 5 × 10<sup>14</sup>
-10<sup>17</sup>
 cm<sup>-3</sup>
. A study of the electrical properties of the milled films showed that N<sub>md</sub>
 comprised ∼2 x 10<sup>15</sup>
 cm<sup>-3</sup>
 for the LWIR and ∼5 × 10<sup>15</sup>
 cm<sup>-3</sup>
 for the MWIR films. In the films with N<sub>In</sub>
 exceeding these critical values, the electron concentration after the milling strictly followed the doping. A need for consideration of the disintegration of the milling-induced defects is also shown.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F17</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Dopage</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Doping</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Doping</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Rayonnement IR lointain</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Far infrared radiation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Radiación infrarroja lejana</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Gravure faisceau ionique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Ion beam etching</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Grabado haz iónico</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Densité électron</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Electron density</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Densidad electrón</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>In situ</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>In situ</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>In situ</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Indio</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Caractéristique électrique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Electrical characteristic</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Tellurure de cadmium</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Cadmium tellurides</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Tellurure de mercure</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Mercury tellurides</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Semiconducteur type n</s0>
<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>n type semiconductor</s0>
<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Semiconductor tipo n</s0>
<s5>25</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>26</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>26</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>31</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>31</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>HgCdTe</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>152</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Descripteurs français

English descriptors

Abstract

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